The Effect Of Annealing Temperature On The Properties Of Thin Zno Films Deposited Using Microwave-Assisted Spray Pyrolysis System

Nafiusokhib Nafiusokhib; Putut Marwoto; Sulhadi Sulhadi; Budi Astuti; Sugianto Sugianto; Teguh Darsono; Siti Wahyuni; Alvin Fachrully Septiano

doi:10.25273/jpfk.v10i1.19813

The Effect Of Annealing Temperature On The Properties Of Thin Zno Films Deposited Using Microwave-Assisted Spray Pyrolysis System

Nafiusokhib Nafiusokhib, Putut Marwoto, Sulhadi Sulhadi, Budi Astuti, Sugianto Sugianto, Teguh Darsono, Siti Wahyuni, Alvin Fachrully Septiano

Abstract

This research aims to determine the optimal annealing temperature for the production of ZnO thin films using the microwave-assisted spray pyrolysis method. In the ZnO growth process, a high microwave temperature was used, with a spray pressure of 20 kg/m2, a nozzle distance of 12 cm, 3 layers, a spray duration of 5 seconds, and a 1-minute interval between layers. Annealing temperature variations included 300°C, 350°C, 400°C, 450°C, 500°C, 550°C, and 600°C. SEM results indicated that the best morphology was achieved at 400°C, with the smoothest and least cracked surface. EDX results showed the highest ZnO composition percentage at 450°C, which was 93.61%.The optical properties obtained from UV-Vis spectroscopy revealed the lowest absorption in the visible light wavelength range (400-700 nm) at an annealing temperature of 450°C. Furthermore, the highest transmittance and the lowest bandgap were observed at an annealing temperature of 450°C, measuring 90.77% and 3.00 eV, respectively. Crystal property analysis from XRD data revealed that all samples had a hexagonal wurtzite structure. The best crystal index was achieved at 450°C, with a value of 81.899%. Increasing the annealing temperature improved the crystal properties, as evidenced by a decreasing full width half maximum (FWHM) until 450°C, which was 0.476°.

Keywords

Annealing; Thin film; Microwave-assisted spray pyrolysis; ZnO

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